Plasma enhanced chemical vapor deposition of p-type Cu<sub>2</sub>O from metal organic precursors
نویسندگان
چکیده
The scope of this work was to optimize the reactant delivery parameters for plasma enhanced chemical vapor deposition (PECVD) p-type Cu2O films from Cu(hfac)(tmvs), with aim explore an alternative other large-area techniques such as sputtering. While n-type metal oxide semiconductors amorphous indium gallium zinc have now been developed and offer significantly improved device performance over hydrogenated silicon, devices achieving mobilities &gt;10cm2(Vs)−1, there is still absence good inorganic that provide similar performance. a promising oxide, but remain limitations on industrial scalability some processes demonstrated so far. PECVD has scaled uniform generation 10 display glass (2.88×3.13m2) provides viable alternative. deposited in achieved Hall mobility ∼1cm2(Vs)−1 were stable period months. Contrary previous reports “incubation” period, initial growth rate during immediately following nucleation (∼40 nm/pulse) times greater than steady state (∼4 later deposition. Topographical scaling methods fractal analysis film surface morphology using atomic force microscopy, at different stages development, link shift regime transition dominated by diffusion volume diffusion.
منابع مشابه
Determination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition
In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...
متن کاملSiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors
متن کامل
Plasma enhanced chemical vapor deposition of SiO2 using novel alkoxysilane precursors
Articles you may be interested in Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy Monte Carlo simulation of surface kinetics during plasma enhanced chemical vapor deposition of SiO2 using oxygen/tetraethoxysilane chemistry Determination of the mechanical stress in plasma enhanced ...
متن کاملPlasma-enhanced chemical vapor deposition of nanocrystalline diamond
Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD) of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles ...
متن کاملGallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.
Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The cry...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2022
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0089757